Specification	NXH75M65L4Q1PTG

Configuration	Half Bridge
Current - Collector (Ic) (Max) [Max]	59 A
Current - Collector Cutoff (Max) [Max]	300 µA
IGBT Type	Trench Field Stop
Input	Standard
Input Capacitance (Cies) @ Vce	5.665 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Power - Max [Max]	86 W
Supplier Device Package	53-PIM/Q2PACK
Supplier Device Package [x]	93
Supplier Device Package [y]	47
Vce(on) (Max) @ Vge, Ic	2.22 V
Voltage - Collector Emitter Breakdown (Max)	650 V

NXH75M65L4Q1 Series

IGBT Module, H6.5 Topology, 650 V, 75 A IGBT, 650 V, 50 A Diode

Part	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Cies) @ Vce	Input	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Supplier Device Package [y]	Supplier Device Package	Supplier Device Package [x]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Configuration	IGBT Type	Package / Case	NTC Thermistor
ON Semiconductor NXH75M65L4Q1PTG	650 V	-40 C	175 °C	5.665 nF	Standard	86 W	2.22 V	47	53-PIM/Q2PACK	93	59 A	300 µA	Chassis Mount	Half Bridge	Trench Field Stop	Module
ON Semiconductor NXH75M65L4Q1SG	650 V	-40 C	175 °C	5.665 nF	Standard	86 W	2.22 V	47	56-PIM	93	59 A	300 µA	Chassis Mount	Half Bridge	Trench Field Stop	Module

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	1	$ 66.27
		21	$ 60.06
		42	$ 57.98
		84	$ 53.84
Newark	Each	10	$ 58.64
		25	$ 57.82
		50	$ 57.00
		100	$ 53.72
ON Semiconductor	N/A	1	$ 45.70

Description

General part information

NXH75M65L4Q1 Series

The NXH75M65L4Q1 is an IGBT module with H6.5 topology in a Q1 package. The module contains six 75 A, 650 V IGBTs, five 50 A, 650V Stealth diodes and a thermistor.