NXH75M65L4Q1 Series

IGBT Module, H6.5 Topology, 650 V, 75 A IGBT, 650 V, 50 A Diode

Catalog

IGBT Module, H6.5 Topology, 650 V, 75 A IGBT, 650 V, 50 A Diode

Part	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Cies) @ Vce	Input	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Supplier Device Package [y]	Supplier Device Package	Supplier Device Package [x]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Configuration	IGBT Type	Package / Case	NTC Thermistor
ON Semiconductor NXH75M65L4Q1PTG	650 V	-40 C	175 °C	5.665 nF	Standard	86 W	2.22 V	47	53-PIM/Q2PACK	93	59 A	300 µA	Chassis Mount	Half Bridge	Trench Field Stop	Module
ON Semiconductor NXH75M65L4Q1SG	650 V	-40 C	175 °C	5.665 nF	Standard	86 W	2.22 V	47	56-PIM	93	59 A	300 µA	Chassis Mount	Half Bridge	Trench Field Stop	Module

Catalog

IGBT Module, H6.5 Topology, 650 V, 75 A IGBT, 650 V, 50 A Diode

Key Features

• Fast switching FieldStop 4 Trench IGBTs with low VCE(SAT) and low switching loss

• Module solution

• Three level H6.5 topology

• Low inductive layout in module

• Solder pins

Description

The NXH75M65L4Q1 is an IGBT module with H6.5 topology in a Q1 package. The module contains six 75 A, 650 V IGBTs, five 50 A, 650V Stealth diodes and a thermistor.