Zenode.ai Logo
Beta
NXH75M65L4Q1SG.jpg
Discrete Semiconductor Products

NXH75M65L4Q1SG

Active
ON Semiconductor

TRANSISTOR IGBT MODULE N-CHANNEL 650V 59A 20V THROUGH HOLE TRAY

Deep-Dive with AI

Search across all available documentation for this part.

NXH75M65L4Q1SG.jpg
Discrete Semiconductor Products

NXH75M65L4Q1SG

Active
ON Semiconductor

TRANSISTOR IGBT MODULE N-CHANNEL 650V 59A 20V THROUGH HOLE TRAY

Technical Specifications

Parameters and characteristics for this part

SpecificationNXH75M65L4Q1SG
ConfigurationHalf Bridge
Current - Collector (Ic) (Max) [Max]59 A
Current - Collector Cutoff (Max) [Max]300 µA
IGBT TypeTrench Field Stop
InputStandard
Input Capacitance (Cies) @ Vce5.665 nF
Mounting TypeChassis Mount
NTC ThermistorTrue
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 C
Package / CaseModule
Power - Max [Max]86 W
Supplier Device Package56-PIM
Supplier Device Package [x]93
Supplier Device Package [y]47
Vce(on) (Max) @ Vge, Ic2.22 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 1$ 73.39
21$ 66.51
42$ 64.22
84$ 59.63
NewarkEach 10$ 64.95
25$ 64.04
50$ 63.13
100$ 59.50
ON SemiconductorN/A 1$ 47.58

Description

General part information

NXH75M65L4Q1 Series

The NXH75M65L4Q1 is an IGBT module with H6.5 topology in a Q1 package. The module contains six 75 A, 650 V IGBTs, five 50 A, 650V Stealth diodes and a thermistor.