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FODM3053R2V-NF098
Isolators

FODM2701AR2

Obsolete
ON Semiconductor

OPTOISO 3.75KV 1CH TRANS 4-SMD

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FODM3053R2V-NF098
Isolators

FODM2701AR2

Obsolete
ON Semiconductor

OPTOISO 3.75KV 1CH TRANS 4-SMD

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFODM2701AR2
Current - DC Forward (If) (Max)50 mA
Current - Output / Channel80 mA
Current Transfer Ratio (Max)300 %
Current Transfer Ratio (Min) [Min]50 %
Input TypeDC
Mounting TypeSurface Mount
Number of Channels1
Operating Temperature [Max]110 °C
Operating Temperature [Min]-40 °C
Output Type1.81 mOhm
Package / Case4-SMD, Gull Wing
Rise / Fall Time (Typ) [custom]3 µs
Rise / Fall Time (Typ) [custom]3 µs
Supplier Device Package4-SMD
Vce Saturation (Max) [Max]300 mV
Voltage - Forward (Vf) (Typ) [Max]1.4 V
Voltage - Isolation3750 Vrms
Voltage - Output (Max) [Max]40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

FODM2705 Series

The FODM121 series, FODM124, and FODM2701 consists of a gallium arsenide infrared emitting diode driving a phototransistor in a compact 4-pin mini-flat package. The lead pitch is 2.54 mm. The FODM2705 consists of two gallium arsenide infrared emitting diodes connected in inverse parallel for AC operation.

Documents

Technical documentation and resources