
FODM2701
ActiveOPTOCOUPLER, TRANSISTOR OUTPUT, 1 CHANNEL, SOP, 4 PINS, 50 MA, 3.75 KV, 50 %
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FODM2701
ActiveOPTOCOUPLER, TRANSISTOR OUTPUT, 1 CHANNEL, SOP, 4 PINS, 50 MA, 3.75 KV, 50 %
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Technical Specifications
Parameters and characteristics for this part
| Specification | FODM2701 |
|---|---|
| Current - DC Forward (If) (Max) | 50 mA |
| Current - Output / Channel | 80 mA |
| Current Transfer Ratio (Max) | 300 % |
| Current Transfer Ratio (Min) [Min] | 50 % |
| Input Type | DC |
| Mounting Type | Surface Mount |
| Number of Channels | 1 |
| Operating Temperature [Max] | 110 °C |
| Operating Temperature [Min] | -40 °C |
| Output Type | 1.81 mOhm |
| Package / Case | 4-SMD, Gull Wing |
| Rise / Fall Time (Typ) [custom] | 3 µs |
| Rise / Fall Time (Typ) [custom] | 3 µs |
| Supplier Device Package | 4-SMD |
| Vce Saturation (Max) [Max] | 300 mV |
| Voltage - Forward (Vf) (Typ) [Max] | 1.4 V |
| Voltage - Isolation | 3750 Vrms |
| Voltage - Output (Max) [Max] | 40 V |
FODM2705 Series
4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers
| Part | Current Transfer Ratio (Min) [Min] | Voltage - Forward (Vf) (Typ) [Max] | Output Type | Voltage - Output (Max) [Max] | Supplier Device Package | Vce Saturation (Max) [Max] | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Input Type | Mounting Type | Voltage - Isolation | Current - DC Forward (If) (Max) | Number of Channels | Current - Output / Channel | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Current Transfer Ratio (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 50 % | 1.4 V | 1.81 mOhm | 40 V | 4-SMD | 300 mV | 4-SMD Gull Wing | -40 °C | 110 °C | DC | Surface Mount | 3750 Vrms | 50 mA | 1 | 80 mA | 3 µs | 3 µs | 300 % |
ON Semiconductor | 50 % | 1.4 V | 1.81 mOhm | 40 V | 4-SMD | 300 mV | 4-SMD Gull Wing | -40 °C | 110 °C | DC | Surface Mount | 3750 Vrms | 50 mA | 1 | 80 mA | 3 µs | 3 µs | 300 % |
ON Semiconductor | 50 % | 1.4 V | 1.81 mOhm | 40 V | 4-SMD | 300 mV | 4-SMD Gull Wing | -40 °C | 110 °C | DC | Surface Mount | 3750 Vrms | 50 mA | 1 | 80 mA | 3 µs | 3 µs | 300 % |
ON Semiconductor | 50 % | 1.4 V | 1.81 mOhm | 40 V | 4-SMD | 300 mV | 4-SMD Gull Wing | -40 °C | 110 °C | DC | Surface Mount | 3750 Vrms | 50 mA | 1 | 80 mA | 3 µs | 3 µs | 300 % |
ON Semiconductor | 50 % | 1.4 V | 1.81 mOhm | 40 V | 4-SMD | 300 mV | 4-SMD Gull Wing | -40 °C | 110 °C | DC | Surface Mount | 3750 Vrms | 50 mA | 1 | 80 mA | 3 µs | 3 µs | 300 % |
ON Semiconductor | 50 % | 1.4 V | 1.81 mOhm | 40 V | 4-SMD | 300 mV | 4-SMD Gull Wing | -40 °C | 110 °C | Surface Mount | 3750 Vrms | 50 mA | 1 | 80 mA | 3 µs | 3 µs | 300 % | |
ON Semiconductor | 50 % | 1.4 V | 1.81 mOhm | 40 V | 4-SMD | 300 mV | 4-SMD Gull Wing | -40 °C | 110 °C | DC | Surface Mount | 3750 Vrms | 50 mA | 1 | 80 mA | 3 µs | 3 µs | 300 % |
ON Semiconductor | 50 % | 1.4 V | 1.81 mOhm | 40 V | 4-SMD | 300 mV | 4-SMD Gull Wing | -40 °C | 110 °C | Surface Mount | 3750 Vrms | 50 mA | 1 | 80 mA | 3 µs | 3 µs | 300 % | |
ON Semiconductor | 50 % | 1.4 V | 1.81 mOhm | 40 V | 4-SMD | 300 mV | 4-SMD Gull Wing | -40 °C | 110 °C | DC | Surface Mount | 3750 Vrms | 50 mA | 1 | 80 mA | 3 µs | 3 µs | 300 % |
ON Semiconductor | 50 % | 1.4 V | 1.81 mOhm | 40 V | 4-SMD | 300 mV | 4-SMD Gull Wing | -40 °C | 110 °C | DC | Surface Mount | 3750 Vrms | 50 mA | 1 | 80 mA | 3 µs | 3 µs | 300 % |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 0.75 | |
| 10 | $ 0.49 | |||
| 100 | $ 0.32 | |||
| 500 | $ 0.39 | |||
| 1000 | $ 0.25 | |||
| 2000 | $ 0.24 | |||
| 5000 | $ 0.23 | |||
| 10000 | $ 0.22 | |||
| 25000 | $ 0.22 | |||
| Newark | Each | 2500 | $ 0.16 | |
| 10000 | $ 0.16 | |||
| ON Semiconductor | N/A | 1 | $ 0.16 | |
Description
General part information
FODM2705 Series
The FODM121 series, FODM124, and FODM2701 consists of a gallium arsenide infrared emitting diode driving a phototransistor in a compact 4-pin mini-flat package. The lead pitch is 2.54 mm. The FODM2705 consists of two gallium arsenide infrared emitting diodes connected in inverse parallel for AC operation.
Documents
Technical documentation and resources