Isolators

FODM2701BR2

Obsolete

ON Semiconductor

OPTOISO 3.75KV TRANSISTOR 4SMD

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Search across all available documentation for this part.

Isolators

FODM2701BR2

Obsolete

ON Semiconductor

OPTOISO 3.75KV TRANSISTOR 4SMD

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FODM2701BR2

Current - DC Forward (If) (Max)	50 mA
Current - Output / Channel	80 mA
Current Transfer Ratio (Max)	300 %
Current Transfer Ratio (Min) [Min]	50 %
Input Type	DC
Mounting Type	Surface Mount
Number of Channels	1
Operating Temperature [Max]	110 °C
Operating Temperature [Min]	-40 °C
Output Type	1.81 mOhm
Package / Case	4-SMD, Gull Wing
Rise / Fall Time (Typ) [custom]	3 µs
Rise / Fall Time (Typ) [custom]	3 µs
Supplier Device Package	4-SMD
Vce Saturation (Max) [Max]	300 mV
Voltage - Forward (Vf) (Typ) [Max]	1.4 V
Voltage - Isolation	3750 Vrms
Voltage - Output (Max) [Max]	40 V

FODM2705 Series

4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers

Part	Current Transfer Ratio (Min) [Min]	Voltage - Forward (Vf) (Typ) [Max]	Output Type	Voltage - Output (Max) [Max]	Supplier Device Package	Vce Saturation (Max) [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Input Type	Mounting Type	Voltage - Isolation	Current - DC Forward (If) (Max)	Number of Channels	Current - Output / Channel	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current Transfer Ratio (Max)
ON Semiconductor FODM2701A	50 %	1.4 V	1.81 mOhm	40 V	4-SMD	300 mV	4-SMD Gull Wing	-40 °C	110 °C	DC	Surface Mount	3750 Vrms	50 mA	1	80 mA	3 µs	3 µs	300 %
ON Semiconductor FODM2701R2	50 %	1.4 V	1.81 mOhm	40 V	4-SMD	300 mV	4-SMD Gull Wing	-40 °C	110 °C	DC	Surface Mount	3750 Vrms	50 mA	1	80 mA	3 µs	3 µs	300 %
ON Semiconductor FODM2701AR2V	50 %	1.4 V	1.81 mOhm	40 V	4-SMD	300 mV	4-SMD Gull Wing	-40 °C	110 °C	DC	Surface Mount	3750 Vrms	50 mA	1	80 mA	3 µs	3 µs	300 %
ON Semiconductor FODM2701R4	50 %	1.4 V	1.81 mOhm	40 V	4-SMD	300 mV	4-SMD Gull Wing	-40 °C	110 °C	DC	Surface Mount	3750 Vrms	50 mA	1	80 mA	3 µs	3 µs	300 %
ON Semiconductor FODM2701AR1	50 %	1.4 V	1.81 mOhm	40 V	4-SMD	300 mV	4-SMD Gull Wing	-40 °C	110 °C	DC	Surface Mount	3750 Vrms	50 mA	1	80 mA	3 µs	3 µs	300 %
ON Semiconductor FODM2705V	50 %	1.4 V	1.81 mOhm	40 V	4-SMD	300 mV	4-SMD Gull Wing	-40 °C	110 °C		Surface Mount	3750 Vrms	50 mA	1	80 mA	3 µs	3 µs	300 %
ON Semiconductor FODM2701BR2	50 %	1.4 V	1.81 mOhm	40 V	4-SMD	300 mV	4-SMD Gull Wing	-40 °C	110 °C	DC	Surface Mount	3750 Vrms	50 mA	1	80 mA	3 µs	3 µs	300 %
ON Semiconductor FODM2705	50 %	1.4 V	1.81 mOhm	40 V	4-SMD	300 mV	4-SMD Gull Wing	-40 °C	110 °C		Surface Mount	3750 Vrms	50 mA	1	80 mA	3 µs	3 µs	300 %
ON Semiconductor FODM2701AR2	50 %	1.4 V	1.81 mOhm	40 V	4-SMD	300 mV	4-SMD Gull Wing	-40 °C	110 °C	DC	Surface Mount	3750 Vrms	50 mA	1	80 mA	3 µs	3 µs	300 %
ON Semiconductor FODM2701	50 %	1.4 V	1.81 mOhm	40 V	4-SMD	300 mV	4-SMD Gull Wing	-40 °C	110 °C	DC	Surface Mount	3750 Vrms	50 mA	1	80 mA	3 µs	3 µs	300 %

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FODM2705 Series

The FODM121 series, FODM124, and FODM2701 consists of a gallium arsenide infrared emitting diode driving a phototransistor in a compact 4-pin mini-flat package. The lead pitch is 2.54 mm. The FODM2705 consists of two gallium arsenide infrared emitting diodes connected in inverse parallel for AC operation.

Documents

Technical documentation and resources

No documents available