
IXTH1N450HV
ActivePOWER MOSFET, N CHANNEL, 4.5 KV, 1 A, 80 OHM, TO-247HV, THROUGH HOLE
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IXTH1N450HV
ActivePOWER MOSFET, N CHANNEL, 4.5 KV, 1 A, 80 OHM, TO-247HV, THROUGH HOLE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IXTH1N450HV |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1 A |
| Drain to Source Voltage (Vdss) | 4500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 Variant |
| Power Dissipation (Max) [Max] | 520 W |
| Rds On (Max) @ Id, Vgs | 80 Ohm |
| Supplier Device Package | TO-247HV |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 43.88 | |
| 30 | $ 36.77 | |||
| 120 | $ 34.32 | |||
Description
General part information
IXTH1N300P3HV Series
Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid. Due to the positive temperature coefficient of their on-state resistance, these high-voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving. Advantages: Easy to mount Space savings High power density
Documents
Technical documentation and resources