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TO 247 HV EP
Discrete Semiconductor Products

IXTH1N300P3HV

Active
Littelfuse/Commercial Vehicle Products

DISC MOSFET N-CH STD-POLAR3 TO-247AD/ TUBE

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TO 247 HV EP
Discrete Semiconductor Products

IXTH1N300P3HV

Active
Littelfuse/Commercial Vehicle Products

DISC MOSFET N-CH STD-POLAR3 TO-247AD/ TUBE

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTH1N300P3HV
Current - Continuous Drain (Id) @ 25°C1 A
Drain to Source Voltage (Vdss)3000 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30.6 nC
Input Capacitance (Ciss) (Max) @ Vds895 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3 Variant
Power Dissipation (Max)195 W
Rds On (Max) @ Id, Vgs50 Ohm
Supplier Device PackageTO-247HV
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 35.70
30$ 29.59
120$ 27.75
NewarkEach 250$ 23.99

Description

General part information

IXTH1N300P3HV Series

Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid. Due to the positive temperature coefficient of their on-state resistance, these high-voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving. Advantages: Easy to mount Space savings High power density