Discrete Semiconductor Products

IXTH1N170DHV

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Littelfuse/Commercial Vehicle Products

DISC MOSFET N-CH DEPL MODE-STD TO-247AD/ TUBE

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Discrete Semiconductor Products

IXTH1N170DHV

Active

Littelfuse/Commercial Vehicle Products

DISC MOSFET N-CH DEPL MODE-STD TO-247AD/ TUBE

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH1N170DHV

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	1700 V
Drive Voltage (Max Rds On, Min Rds On)	0 V
FET Feature	Depletion Mode
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	47 nC
Input Capacitance (Ciss) (Max) @ Vds	3090 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max)	290 W
Rds On (Max) @ Id, Vgs	16 Ohm
Supplier Device Package	TO-247HV
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IXTH1N300P3HV Series

Disc Mosfet N-CH Depl Mode-Std TO-247AD

Part	Package / Case	Power Dissipation (Max)	Vgs (Max)	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Feature	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]
Littelfuse/Commercial Vehicle Products IXTH1N170DHV	TO-247-3 Variant	290 W	20 V	TO-247HV	N-Channel	47 nC	Through Hole	16 Ohm	0 V	Depletion Mode	MOSFET (Metal Oxide)	4.5 V	3090 pF	1 A	-55 °C	150 °C	1700 V
Littelfuse/Commercial Vehicle Products IXTH1N300P3HV	TO-247-3 Variant	195 W	20 V	TO-247HV	N-Channel	30.6 nC	Through Hole	50 Ohm	10 V		MOSFET (Metal Oxide)	4 V	895 pF	1 A	-55 °C	150 °C	3000 V
Littelfuse/Commercial Vehicle Products IXTH1N250	TO-247-3			TO-247AD	N-Channel		Through Hole	40 Ohm			MOSFET (Metal Oxide)	4 V	1660 pF	1.5 A			2500 V	41 nC
Littelfuse/Commercial Vehicle Products IXTH1N450HV	TO-247-3 Variant		20 V	TO-247HV	N-Channel	46 nC	Through Hole	80 Ohm	10 V		MOSFET (Metal Oxide)		1700 pF	1 A	-55 °C	150 °C	4500 V		520 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 20.20
		10	$ 14.46
		100	$ 11.35
LCSC	Piece	1	$ 4.49
		210	$ 1.79
		510	$ 1.73
		990	$ 1.70
Newark	Each	250	$ 12.80
		500	$ 11.89

Description

General part information

IXTH1N300P3HV Series

Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid. Due to the positive temperature coefficient of their on-state resistance, these high-voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving. Advantages: Easy to mount Space savings High power density

Documents

Technical documentation and resources

No documents available