Discrete Semiconductor Products

MT3S20TU(TE85L)

Obsolete

RF TRANS NPN 12V 7GHZ UFM

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

RF TRANS NPN 12V 7GHZ UFM

Technical Specifications

Parameters and characteristics for this part

Specification	MT3S20TU(TE85L)

Current - Collector (Ic) (Max) [Max]	80 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	7 GHz
Gain	12 dBi
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f)	1.45 dB
Operating Temperature	150 °C
Power - Max [Max]	900 mW
Supplier Device Package	UFM
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	12 V

Part	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Operating Temperature	Supplier Device Package	Noise Figure (dB Typ @ f)	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Mounting Type	Gain	Package / Case
Toshiba Semiconductor and Storage MT3S20TU(TE85L)	NPN	100	900 mW	150 °C	UFM	1.45 dB	80 mA	12 V	7 GHz	Surface Mount	12 dBi
Toshiba Semiconductor and Storage MT3S20P(TE12L,F)	NPN	100	1.8 W	150 °C	PW-MINI	1.45 dB	80 mA	12 V	7 GHz	Surface Mount	16.5 dBi	TO-243AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

RF Transistor NPN 12V 80mA 7GHz 900mW Surface Mount UFM

Technical documentation and resources

No documents available