MT3S20 Series
Manufacturer: Toshiba Semiconductor and Storage
RF TRANS NPN 12V 7GHZ UFM
| Part | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Power - Max [Max] | Operating Temperature | Supplier Device Package | Noise Figure (dB Typ @ f) | Current - Collector (Ic) (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Frequency - Transition | Mounting Type | Gain | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | NPN | 100 | 900 mW | 150 °C | UFM | 1.45 dB | 80 mA | 12 V | 7 GHz | Surface Mount | 12 dBi | |
Toshiba Semiconductor and Storage | NPN | 100 | 1.8 W | 150 °C | PW-MINI | 1.45 dB | 80 mA | 12 V | 7 GHz | Surface Mount | 16.5 dBi | TO-243AA |