Discrete Semiconductor Products

MT3S20P(TE12L,F)

Obsolete

RF TRANS NPN 12V 7GHZ PW-MINI

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

RF TRANS NPN 12V 7GHZ PW-MINI

Technical Specifications

Parameters and characteristics for this part

Specification	MT3S20P(TE12L,F)

Current - Collector (Ic) (Max) [Max]	80 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	7 GHz
Gain	16.5 dBi
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f)	1.45 dB
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	1.8 W
Supplier Device Package	PW-MINI
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	12 V

Part	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Operating Temperature	Supplier Device Package	Noise Figure (dB Typ @ f)	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Mounting Type	Gain	Package / Case
Toshiba Semiconductor and Storage MT3S20TU(TE85L)	NPN	100	900 mW	150 °C	UFM	1.45 dB	80 mA	12 V	7 GHz	Surface Mount	12 dBi
Toshiba Semiconductor and Storage MT3S20P(TE12L,F)	NPN	100	1.8 W	150 °C	PW-MINI	1.45 dB	80 mA	12 V	7 GHz	Surface Mount	16.5 dBi	TO-243AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

RF Transistor NPN 12V 80mA 7GHz 1.8W Surface Mount PW-MINI

Technical documentation and resources

No documents available