Discrete Semiconductor Products

SI7862ADP-T1-GE3

LTB

MOSFET N-CH 16V 18A PPAK SO-8

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Discrete Semiconductor Products

LTB

MOSFET N-CH 16V 18A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7862ADP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	16 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	80 nC
Input Capacitance (Ciss) (Max) @ Vds	7340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	1.9 W
Rds On (Max) @ Id, Vgs	3 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	2 V

Part	Rds On (Max) @ Id, Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SI7862ADP-T1-GE3	3 mOhm	8 V	18 A	16 V	PowerPAK® SO-8	PowerPAK® SO-8	-55 °C	150 °C	2 V	N-Channel	MOSFET (Metal Oxide)	2.5 V 4.5 V	Surface Mount	7340 pF	80 nC	1.9 W
Vishay General Semiconductor - Diodes Division SI7862ADP-T1-E3	3 mOhm	8 V	18 A	16 V	PowerPAK® SO-8	PowerPAK® SO-8	-55 °C	150 °C	2 V	N-Channel	MOSFET (Metal Oxide)	2.5 V 4.5 V	Surface Mount	7340 pF	80 nC	1.9 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	3000	$ 2.14

General part information

N-Channel 16 V 18A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Technical documentation and resources