SI7862 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 16V 18A PPAK SO-8
| Part | Rds On (Max) @ Id, Vgs | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Package / Case | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | FET Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 3 mOhm | 8 V | 18 A | 16 V | PowerPAK® SO-8 | PowerPAK® SO-8 | -55 °C | 150 °C | 2 V | N-Channel | MOSFET (Metal Oxide) | 2.5 V 4.5 V | Surface Mount | 7340 pF | 80 nC | 1.9 W |
Vishay General Semiconductor - Diodes Division | 3 mOhm | 8 V | 18 A | 16 V | PowerPAK® SO-8 | PowerPAK® SO-8 | -55 °C | 150 °C | 2 V | N-Channel | MOSFET (Metal Oxide) | 2.5 V 4.5 V | Surface Mount | 7340 pF | 80 nC | 1.9 W |