Discrete Semiconductor Products

SI7862ADP-T1-E3

LTB

MOSFET N-CH 16V 18A PPAK SO-8

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

MOSFET N-CH 16V 18A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7862ADP-T1-E3

Current - Continuous Drain (Id) (Ta)	18 A, 18 A
Drain to Source Voltage (Vdss)	16 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	80 nC
Input Capacitance (Ciss) (Max)	7340 pF, 7340 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	1.9 W
Rds On (Max)	3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	2 V

Part	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Technology	Current - Continuous Drain (Id) (Ta)	Package / Case	Vgs(th) (Max)	Mounting Type	Package Name	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	FET Type	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Power Dissipation (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)
Vishay Dale SI7862ADP-T1-GE3	-55 °C	150 °C	3 mOhm	MOSFET (Metal Oxide)	18 A 18 A	PowerPAK® SO-8	2 V	Surface Mount	PowerPAK® SO-8	2.5 V	4.5 V	N-Channel	7340 pF 7340 pF	80 nC	1.9 W	8 V	16 V
Vishay Dale SI7862ADP-T1-E3	-55 °C	150 °C	3 mOhm	MOSFET (Metal Oxide)	18 A 18 A	PowerPAK® SO-8	2 V	Surface Mount	PowerPAK® SO-8	2.5 V	4.5 V	N-Channel	7340 pF 7340 pF	80 nC	1.9 W	8 V	16 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Cut Tape (CT)	1	$ 4.39	1m+
	Digi-Reel®	1	$ 4.39	1m+
	N/A	0	$ 5.44	1m+
	Tape & Reel (TR)	3000	$ 2.14	1m+

3D models and CAD resources for this part

General part information

N-Channel 16 V 18A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Technical documentation and resources