Discrete Semiconductor Products

PMDPB70XPE,115

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PMDPB70XPE - 20 V DUAL P-CHANNEL TRENCH MOSFET@EN-US DFN 6-PIN

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Discrete Semiconductor Products

Active

PMDPB70XPE - 20 V DUAL P-CHANNEL TRENCH MOSFET@EN-US DFN 6-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PMDPB70XPE,115

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	7.5 nC
Input Capacitance (Ciss) (Max) @ Vds	600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UFDFN Exposed Pad
Power - Max [Max]	515 mW
Rds On (Max) @ Id, Vgs	79 mOhm
Supplier Device Package	6-HUSON (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.25 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs(th) (Max) @ Id	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Configuration	Drain to Source Voltage (Vdss)	FET Feature	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Mounting Type
Freescale Semiconductor - NXP PMDPB70EN,115	130 pF	MOSFET (Metal Oxide)	2.5 V	510 mW	3.5 A	-55 °C	150 °C	57 mOhm	2 N-Channel (Dual)	30 V	Logic Level Gate	6-HUSON (2x2)	4.5 nC	6-UFDFN Exposed Pad	Surface Mount
Freescale Semiconductor - NXP PMDPB70XP,115	680 pF	MOSFET (Metal Oxide)	1 V	490 mW	2.9 A	-55 °C	150 °C		2 P-Channel	30 V	Logic Level Gate	6-HUSON (2x2)	7.8 nC	6-UFDFN Exposed Pad	Surface Mount
Freescale Semiconductor - NXP PMDPB70XPE,115	600 pF	MOSFET (Metal Oxide)	1.25 V	515 mW	3 A	-55 °C	150 °C	79 mOhm	2 P-Channel	20 V	Logic Level Gate	6-HUSON (2x2)	7.5 nC	6-UFDFN Exposed Pad	Surface Mount

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General part information

Mosfet Array 20V 3A 515mW Surface Mount 6-HUSON (2x2)

Technical documentation and resources