Zenode.ai Logo
Beta
SOT1118
Discrete Semiconductor Products

PMDPB70XPE,115

Active
Nexperia USA Inc.

20 V DUAL P-CHANNEL TRENCH MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

SOT1118
Discrete Semiconductor Products

PMDPB70XPE,115

Active
Nexperia USA Inc.

20 V DUAL P-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPMDPB70XPE,115
Configuration2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C3 A
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs7.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]600 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UFDFN Exposed Pad
Power - Max [Max]515 mW
Rds On (Max) @ Id, Vgs79 mOhm
Supplier Device Package6-HUSON (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.64
10$ 0.40
100$ 0.25
500$ 0.19
1000$ 0.17
Digi-Reel® 1$ 0.64
10$ 0.40
100$ 0.25
500$ 0.19
1000$ 0.17
N/A 3224$ 0.80
Tape & Reel (TR) 3000$ 0.13
6000$ 0.12
9000$ 0.11
15000$ 0.11

Description

General part information

PMDPB70 Series

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.