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20 V dual P-channel Trench MOSFET
Description
AI
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V dual P-channel Trench MOSFET
20 V dual P-channel Trench MOSFET
| Part | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Configuration | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Mounting Type | FET Feature | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power - Max [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 6-HUSON (2x2) | 3.5 A | 2 N-Channel (Dual) | 4.5 nC | 6-UFDFN Exposed Pad | Surface Mount | Logic Level Gate | 57 mOhm | 2.5 V | 30 V | 130 pF | 510 mW | 150 °C | -55 °C | MOSFET (Metal Oxide) | ||
Nexperia USA Inc. | 6-HUSON (2x2) | 2.9 A | 2 P-Channel (Dual) | 7.8 nC | 6-UFDFN Exposed Pad | Surface Mount | Logic Level Gate | 1 V | 30 V | 490 mW | 150 °C | -55 °C | MOSFET (Metal Oxide) | 680 pF | |||
Nexperia USA Inc. | 6-HUSON (2x2) | 3 A | 2 P-Channel (Dual) | 6-UFDFN Exposed Pad | Surface Mount | Logic Level Gate | 79 mOhm | 1.25 V | 20 V | 600 pF | 515 mW | 150 °C | -55 °C | MOSFET (Metal Oxide) | 7.5 nC |