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SOT1118
Discrete Semiconductor Products

PMDPB70EN,115

Obsolete
Nexperia USA Inc.

MOSFET 2N-CH 30V 3.5A 6HUSON

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SOT1118
Discrete Semiconductor Products

PMDPB70EN,115

Obsolete
Nexperia USA Inc.

MOSFET 2N-CH 30V 3.5A 6HUSON

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPMDPB70EN,115
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C3.5 A
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]4.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]130 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UFDFN Exposed Pad
Power - Max [Max]510 mW
Rds On (Max) @ Id, Vgs57 mOhm
Supplier Device Package6-HUSON (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00
39355$ 0.52

Description

General part information

PMDPB70 Series

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Documents

Technical documentation and resources