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MJF47G
Discrete Semiconductor Products

MJF47G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 250 V, 1 A, 40 MW, TO-220, THROUGH HOLE

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Search across all available documentation for this part.

DocumentsDatasheetProduct Change Notice EN+2
MJF47G
Discrete Semiconductor Products

MJF47G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 250 V, 1 A, 40 MW, TO-220, THROUGH HOLE

Deep-Dive with AI

DocumentsDatasheetProduct Change Notice EN+2

Technical Specifications

Parameters and characteristics for this part

SpecificationMJF47G
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]200 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]30
Frequency - Transition10 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-220-3 Full Pack
Power - Max [Max]2 W
Supplier Device PackageTO-220FP
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max)250 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.16
10$ 1.38
100$ 0.94
500$ 0.75
1000$ 0.68
2000$ 0.63
5000$ 0.58
NewarkEach 100$ 0.92
500$ 0.79
1000$ 0.67
2500$ 0.63
10000$ 0.60
ON SemiconductorN/A 1$ 0.62

Description

General part information

MJF47 Series

The High Voltage Bipolar Power NPN Transistor is designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.