Specification	MJF47

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	200 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Frequency - Transition	10 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	2 W
Supplier Device Package	TO-220FP
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	250 V

MJF47 Series

High Voltage NPN Bipolar Power Transistor

Part	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Frequency - Transition	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Mounting Type	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]
ON Semiconductor MJF47	150 °C	-65 °C	1 V	TO-220-3 Full Pack	250 V	2 W	10 MHz	TO-220FP	200 µA	Through Hole	NPN	30	1 A
ON Semiconductor MJF47G	150 °C	-65 °C	1 V	TO-220-3 Full Pack	250 V	2 W	10 MHz	TO-220FP	200 µA	Through Hole	NPN	30	1 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MJF47 Series

The High Voltage Bipolar Power NPN Transistor is designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.