MJF47 Series

High Voltage NPN Bipolar Power Transistor

Catalog

High Voltage NPN Bipolar Power Transistor

Part	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Frequency - Transition	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Mounting Type	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]
ON Semiconductor MJF47	150 °C	-65 °C	1 V	TO-220-3 Full Pack	250 V	2 W	10 MHz	TO-220FP	200 µA	Through Hole	NPN	30	1 A
ON Semiconductor MJF47G	150 °C	-65 °C	1 V	TO-220-3 Full Pack	250 V	2 W	10 MHz	TO-220FP	200 µA	Through Hole	NPN	30	1 A

Catalog

High Voltage NPN Bipolar Power Transistor

Key Features

• Electrically Similar to the Popular TIP47

• 250 VCEO(sus)

• 1 A Rated Collector Current

• No Isolating Washers Required

• Reduced System Cost

• UL Recognized, File #E69369, to 3500 VRMSIsolation

• Pb-Free Package is Available

Description

The High Voltage Bipolar Power NPN Transistor is designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.