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TO-3P-3,TO-247-3
Discrete Semiconductor Products

FGA15N120ANTDTU-F109

Obsolete
ON Semiconductor

IGBT, 1200V, 15A, NPT TRENCH

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TO-3P-3,TO-247-3
Discrete Semiconductor Products

FGA15N120ANTDTU-F109

Obsolete
ON Semiconductor

IGBT, 1200V, 15A, NPT TRENCH

Technical Specifications

Parameters and characteristics for this part

SpecificationFGA15N120ANTDTU-F109
Current - Collector (Ic) (Max) [Max]30 A
Current - Collector Pulsed (Icm)45 A
Gate Charge120 nC
IGBT TypeNPT and Trench
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-65-3, TO-3P-3
Power - Max [Max]186 W
Reverse Recovery Time (trr)330 ns
Supplier Device PackageTO-3P
Switching Energy600 µJ, 3 mJ
Td (on/off) @ 25°C15 ns, 160 ns
Test Condition600 V, 15 A, 10 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

FGA15N120ANTDTU Series

Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven