Discrete Semiconductor Products

FGA15N120ANDTU

Obsolete

ON Semiconductor

IGBT 1200V 24A 200W TO3P

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

FGA15N120ANDTU

Obsolete

ON Semiconductor

IGBT 1200V 24A 200W TO3P

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FGA15N120ANDTU

Current - Collector (Ic) (Max) [Max]	24 A
Current - Collector Pulsed (Icm)	45 A
Gate Charge	120 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	200 W
Reverse Recovery Time (trr)	330 ns
Supplier Device Package	TO-3PN
Switching Energy	600 µJ, 3.27 mJ
Test Condition	15 V, 600 V, 15 A, 20 Ohm
Vce(on) (Max) @ Vge, Ic	3.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

FGA15N120ANTDTU Series

IGBT, 1200V, 15A, NPT Trench

Part	Test Condition	Supplier Device Package	Package / Case	Gate Charge	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Switching Energy	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	IGBT Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]
ON Semiconductor FGA15N120ANTDTU-F109	10 Ohm 15 A 15 V 600 V	TO-3P	SC-65-3 TO-3P-3	120 nC	330 ns	2.4 V	15 ns 160 ns	3 mJ 600 µJ	1200 V	186 W	NPT and Trench	Through Hole	-55 °C	150 °C	45 A	30 A
ON Semiconductor FGA15N120FTDTU		TO-3P	SC-65-3 TO-3P-3	100 nC	575 ns	2 V			1200 V	220 W	Trench Field Stop	Through Hole	-55 °C	150 °C	45 A	30 A
ON Semiconductor FGA15N120ANTDTU	10 Ohm 15 A 15 V 600 V	TO-3P	SC-65-3 TO-3P-3	120 nC	330 ns	2.4 V	15 ns 160 ns	3 mJ 600 µJ	1200 V	186 W	NPT and Trench	Through Hole	-55 °C	150 °C	45 A	30 A
ON Semiconductor FGA15N120ANDTU	15 V 15 A 20 Ohm 600 V	TO-3PN	SC-65-3 TO-3P-3	120 nC	330 ns	3.2 V		3.27 mJ 600 µJ	1200 V	200 W	NPT	Through Hole	-55 °C	150 °C	45 A	24 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FGA15N120ANTDTU Series

Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven

Documents

Technical documentation and resources