FGA15N120ANTDTU Series

IGBT, 1200V, 15A, NPT Trench

Catalog

IGBT, 1200V, 15A, NPT Trench

Part	Test Condition	Supplier Device Package	Package / Case	Gate Charge	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Switching Energy	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	IGBT Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]
ON Semiconductor FGA15N120ANTDTU-F109	10 Ohm 15 A 15 V 600 V	TO-3P	SC-65-3 TO-3P-3	120 nC	330 ns	2.4 V	15 ns 160 ns	3 mJ 600 µJ	1200 V	186 W	NPT and Trench	Through Hole	-55 °C	150 °C	45 A	30 A
ON Semiconductor FGA15N120FTDTU		TO-3P	SC-65-3 TO-3P-3	100 nC	575 ns	2 V			1200 V	220 W	Trench Field Stop	Through Hole	-55 °C	150 °C	45 A	30 A
ON Semiconductor FGA15N120ANTDTU	10 Ohm 15 A 15 V 600 V	TO-3P	SC-65-3 TO-3P-3	120 nC	330 ns	2.4 V	15 ns 160 ns	3 mJ 600 µJ	1200 V	186 W	NPT and Trench	Through Hole	-55 °C	150 °C	45 A	30 A
ON Semiconductor FGA15N120ANDTU	15 V 15 A 20 Ohm 600 V	TO-3PN	SC-65-3 TO-3P-3	120 nC	330 ns	3.2 V		3.27 mJ 600 µJ	1200 V	200 W	NPT	Through Hole	-55 °C	150 °C	45 A	24 A

Catalog

IGBT, 1200V, 15A, NPT Trench

Key Features

• NPT Trench Technology, Positive temperature coefficient

• Low saturation voltage: VCE(sat), typ = 1.9V@ IC= 15A and TC= 25°C

• Low switching loss: EOFF, typ = 0.6mJ@ IC= 15A and TC= 25°C

• Extremely enhanced avalanche capability

Description

Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven