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Technical Specifications
Parameters and characteristics for this part
| Specification | H11G1M |
|---|---|
| Current - DC Forward (If) (Max) [Max] | 60 mA |
| Current Transfer Ratio (Min) [Min] | 1000 % |
| Input Type | DC |
| Mounting Type | Through Hole |
| Number of Channels | 1 |
| Operating Temperature [Max] | 100 °C |
| Operating Temperature [Min] | -40 °C |
| Output Type | Darlington with Base |
| Package / Case | 6-DIP |
| Package / Case | 0.3 in |
| Package / Case | 7.62 mm |
| Supplier Device Package | 6-DIP |
| Vce Saturation (Max) [Max] | 1 V |
| Voltage - Forward (Vf) (Typ) | 1.3 V |
| Voltage - Isolation | 4170 Vrms |
| Voltage - Output (Max) [Max] | 100 V |
H11G1M Series
6-Pin DIP High Voltage Photodarlington Output Optocoupler
| Part | Vce Saturation (Max) [Max] | Turn On / Turn Off Time (Typ) | Output Type | Voltage - Forward (Vf) (Typ) | Voltage - Isolation | Mounting Type | Package / Case | Package / Case | Package / Case | Input Type | Number of Channels | Current - DC Forward (If) (Max) [Max] | Supplier Device Package | Current Transfer Ratio (Min) [Min] | Voltage - Output (Max) [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 1 V | 5 µs 100 µs | Darlington with Base | 1.3 V | 4170 Vrms | Through Hole | 6-DIP | 10.16 mm | 10.16 mm | DC | 1 | 60 mA | 6-DIP | 1000 % | 100 V | 100 °C | -40 °C | |
 ON Semiconductor | 1 V | 5 µs 100 µs | Darlington with Base | 1.3 V | 4170 Vrms | Surface Mount | 6-SMD Gull Wing | DC | 1 | 60 mA | 6-SMD | 1000 % | 100 V | 100 °C | -40 °C | |||
ON Semiconductor | 1 V | Darlington with Base | 1.3 V | 4170 Vrms | Through Hole | 6-DIP | 7.62 mm | DC | 1 | 60 mA | 6-DIP | 1000 % | 100 V | 100 °C | -40 °C | 0.3 in |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.08 | |
| 50 | $ 0.71 | |||
| 100 | $ 0.46 | |||
| 1000 | $ 0.36 | |||
| 2000 | $ 0.34 | |||
| 5000 | $ 0.33 | |||
| 10000 | $ 0.32 | |||
| 25000 | $ 0.32 | |||
| Newark | Each | 1000 | $ 0.37 | |
| 3000 | $ 0.33 | |||
| 10000 | $ 0.33 | |||
| ON Semiconductor | N/A | 1 | $ 0.32 | |
Description
General part information
H11G1M Series
The H11G1M and H11G2M are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
Documents
Technical documentation and resources