Specification	H11G1SM

Current - DC Forward (If) (Max) [Max]	60 mA
Current Transfer Ratio (Min) [Min]	1000 %
Input Type	DC
Mounting Type	Surface Mount
Number of Channels	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-40 °C
Output Type	Darlington with Base
Package / Case	6-SMD, Gull Wing
Supplier Device Package	6-SMD
Turn On / Turn Off Time (Typ)	5 µs, 100 µs
Vce Saturation (Max) [Max]	1 V
Voltage - Forward (Vf) (Typ)	1.3 V
Voltage - Isolation	4170 Vrms
Voltage - Output (Max) [Max]	100 V

H11G1M Series

6-Pin DIP High Voltage Photodarlington Output Optocoupler

Part	Vce Saturation (Max) [Max]	Turn On / Turn Off Time (Typ)	Output Type	Voltage - Forward (Vf) (Typ)	Voltage - Isolation	Mounting Type	Package / Case	Package / Case	Package / Case	Input Type	Number of Channels	Current - DC Forward (If) (Max) [Max]	Supplier Device Package	Current Transfer Ratio (Min) [Min]	Voltage - Output (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case
ON Semiconductor H11G1TVM	1 V	5 µs 100 µs	Darlington with Base	1.3 V	4170 Vrms	Through Hole	6-DIP	10.16 mm	10.16 mm	DC	1	60 mA	6-DIP	1000 %	100 V	100 °C	-40 °C
ON Semiconductor H11G1SM	1 V	5 µs 100 µs	Darlington with Base	1.3 V	4170 Vrms	Surface Mount	6-SMD Gull Wing			DC	1	60 mA	6-SMD	1000 %	100 V	100 °C	-40 °C
ON Semiconductor H11G1M	1 V		Darlington with Base	1.3 V	4170 Vrms	Through Hole	6-DIP		7.62 mm	DC	1	60 mA	6-DIP	1000 %	100 V	100 °C	-40 °C	0.3 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.06
		10	$ 0.67
		100	$ 0.50
		500	$ 0.46
		1000	$ 0.38
		2000	$ 0.36
		5000	$ 0.35
		10000	$ 0.34
		25000	$ 0.34
Newark	Each	1000	$ 0.37
		2500	$ 0.30
		10000	$ 0.29
ON Semiconductor	N/A	1	$ 0.29

Description

General part information

H11G1M Series

The H11G1M and H11G2M are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.