H11G1M Series

6-Pin DIP High Voltage Photodarlington Output Optocoupler

Catalog

6-Pin DIP High Voltage Photodarlington Output Optocoupler

Part	Vce Saturation (Max) [Max]	Turn On / Turn Off Time (Typ)	Output Type	Voltage - Forward (Vf) (Typ)	Voltage - Isolation	Mounting Type	Package / Case	Package / Case	Package / Case	Input Type	Number of Channels	Current - DC Forward (If) (Max) [Max]	Supplier Device Package	Current Transfer Ratio (Min) [Min]	Voltage - Output (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case
ON Semiconductor H11G1TVM	1 V	5 µs 100 µs	Darlington with Base	1.3 V	4170 Vrms	Through Hole	6-DIP	10.16 mm	10.16 mm	DC	1	60 mA	6-DIP	1000 %	100 V	100 °C	-40 °C
ON Semiconductor H11G1SM	1 V	5 µs 100 µs	Darlington with Base	1.3 V	4170 Vrms	Surface Mount	6-SMD Gull Wing			DC	1	60 mA	6-SMD	1000 %	100 V	100 °C	-40 °C
ON Semiconductor H11G1M	1 V		Darlington with Base	1.3 V	4170 Vrms	Through Hole	6-DIP		7.62 mm	DC	1	60 mA	6-DIP	1000 %	100 V	100 °C	-40 °C	0.3 in

Catalog

6-Pin DIP High Voltage Photodarlington Output Optocoupler

Key Features

• High BVCEO:

• 100 V Minimum for H11G1M

• 80 V Minimum for H11G2M

• High Sensitivity to Low Input Current (Minimum 500% CTR at IF= 1 mA)

• Low Leakage Current at Elevated Temperature (Maximum 100 μA at 80°C)

• Safety and Regulatory Approvals:

• UL1577, 4,170 VACRMSfor 1 Minute

• DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage

Description

The H11G1M and H11G2M are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.