STF16N50M2
ActiveN-CHANNEL 500 V, 0.24 OHM TYP., 13 A MDMESH M2 POWER MOSFET IN A TO-220FP PACKAGE
STF16N50M2
ActiveN-CHANNEL 500 V, 0.24 OHM TYP., 13 A MDMESH M2 POWER MOSFET IN A TO-220FP PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STF16N50M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 19.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 710 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 25 W |
| Rds On (Max) @ Id, Vgs | 280 mOhm |
| Supplier Device Package | TO-220 Full Pack |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
STF16 Series
N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP package
| Part | Mounting Type | FET Type | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | Through Hole | N-Channel | 4 V | TO-220FP | MOSFET (Metal Oxide) | 25 V | 38 nC | 15 A | TO-220-3 Full Pack | 10 V | 150 °C | 500 V | 1200 pF | 260 mOhm | ||||||
 STMicroelectronics | Through Hole | N-Channel | 4 V | TO-220FP | MOSFET (Metal Oxide) | 25 V | 19.5 nC | 11 A | TO-220-3 Full Pack | 10 V | 650 V | 360 mOhm | 150 °C | -55 °C | 25 W | |||||
STMicroelectronics | Through Hole | N-Channel | 5 V | TO-220FP | MOSFET (Metal Oxide) | 25 V | 12 A | TO-220-3 Full Pack | 10 V | 150 °C | 650 V | 1250 pF | 25 W | 299 mOhm | 45 nC | |||||
STMicroelectronics | Through Hole | N-Channel | 4 V | TO-220 Full Pack | MOSFET (Metal Oxide) | 25 V | 19.5 nC | 13 A | TO-220-3 Full Pack | 10 V | 500 V | 280 mOhm | 150 °C | -55 °C | 25 W | 710 pF | ||||
STMicroelectronics | Through Hole | N-Channel | 4.5 V | TO-220FP | MOSFET (Metal Oxide) | 30 V | 86 nC | 14 A | TO-220-3 Full Pack | 10 V | 150 °C | 600 V | 420 mOhm | 40 W | 2650 pF |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 704 | $ 2.52 | |
| Tube | 1 | $ 4.01 | ||
| 50 | $ 3.18 | |||
| 100 | $ 2.73 | |||
| 500 | $ 2.42 | |||
| 1000 | $ 2.08 | |||
| 2000 | $ 1.95 | |||
| 5000 | $ 1.88 | |||
Description
General part information
STF16 Series
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Documents
Technical documentation and resources