
STF16N65M2
ActiveN-CHANNEL 650 V, 0.32 OHM TYP., 11 A MDMESH M2 POWER MOSFET IN TO-220FP PACKAGE

STF16N65M2
ActiveN-CHANNEL 650 V, 0.32 OHM TYP., 11 A MDMESH M2 POWER MOSFET IN TO-220FP PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STF16N65M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19.5 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 25 W |
| Rds On (Max) @ Id, Vgs | 360 mOhm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.10 | |
| 50 | $ 1.69 | |||
| 100 | $ 1.39 | |||
| 500 | $ 1.17 | |||
| 1000 | $ 1.00 | |||
| 2000 | $ 0.95 | |||
| 5000 | $ 0.91 | |||
| 10000 | $ 0.88 | |||
Description
General part information
STF16N50M2 Series
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Documents
Technical documentation and resources