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SIZ902DT-T1-GE3
Discrete Semiconductor Products

SIZ998BDT-T1-GE3

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Vishay General Semiconductor - Diodes Division

MOSFET 2N-CH 30V 23.7A 8PWRPAIR

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DocumentsDatasheet
SIZ902DT-T1-GE3
Discrete Semiconductor Products

SIZ998BDT-T1-GE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET 2N-CH 30V 23.7A 8PWRPAIR

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSIZ998BDT-T1-GE3
Configuration2 N-Channel (Dual), Schottky
Current - Continuous Drain (Id) @ 25°C23.7 A, 94.6 A, 54.8 A, 36.2 A
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs18 nC
Gate Charge (Qg) (Max) @ Vgs46.7 nC
Input Capacitance (Ciss) (Max) @ Vds2130 pF, 790 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power - Max32.9 W, 20 W, 3.8 W, 4.8 W
Rds On (Max) @ Id, Vgs4.39 mOhm, 2.4 mOhm
Supplier Device Package8-PowerPair® (6x5)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.29
10$ 0.60
100$ 0.44
500$ 0.41
Digi-Reel® 1$ 1.29
10$ 0.60
100$ 0.44
500$ 0.41
Tape & Reel (TR) 3000$ 0.34

Description

General part information

SIZ998 Series

Mosfet Array 30V 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc) 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc) Surface Mount 8-PowerPair® (6x5)

Documents

Technical documentation and resources