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8-Power Pair
Discrete Semiconductor Products

SIZ998DT-T1-GE3

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8-Power Pair
Discrete Semiconductor Products

SIZ998DT-T1-GE3

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSIZ998DT-T1-GE3
Configuration2 N-Channel (Dual), Schottky
Current - Continuous Drain (Id) @ 25°C60 A, 20 A
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs8.1 nC
Gate Charge (Qg) (Max) @ Vgs19.8 nC
Input Capacitance (Ciss) (Max) @ Vds930 pF, 2620 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power - Max32.9 W, 20.2 W
Rds On (Max) @ Id, Vgs2.8 mOhm, 6.7 mOhm
Supplier Device Package8-PowerPair® (6x5)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.10
10$ 1.34
100$ 0.91
500$ 0.72
1000$ 0.66
Digi-Reel® 1$ 2.10
10$ 1.34
100$ 0.91
500$ 0.72
1000$ 0.66
Tape & Reel (TR) 3000$ 0.56

Description

General part information

SIZ998 Series

Mosfet Array 30V 20A (Tc), 60A (Tc) 20.2W, 32.9W Surface Mount 8-PowerPair® (6x5)

Documents

Technical documentation and resources