SIZ998 Series

Catalog

MOSFET 2N-CH 30V 20A 8PWRPAIR

Part	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Configuration	Power - Max	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
Vishay General Semiconductor - Diodes Division SIZ998DT-T1-GE3	2.2 V	2.8 mOhm 6.7 mOhm	8-PowerPair® (6x5)	930 pF 2620 pF	MOSFET (Metal Oxide)	20 A 60 A	8.1 nC	19.8 nC	2 N-Channel (Dual) Schottky	20.2 W 32.9 W	Surface Mount	30 V	-55 °C	150 °C	8-PowerWDFN
Vishay General Semiconductor - Diodes Division SIZ998BDT-T1-GE3	2.2 V	2.4 mOhm 4.39 mOhm	8-PowerPair® (6x5)	790 pF 2130 pF	MOSFET (Metal Oxide)	23.7 A 36.2 A 54.8 A 94.6 A	18 nC	46.7 nC	2 N-Channel (Dual) Schottky	3.8 W 4.8 W 20 W 32.9 W	Surface Mount	30 V	-55 °C	150 °C	8-PowerWDFN