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RF and Wireless

HMC349AMS8G

Active
Analog Devices

HIGH ISOLATION, NONREFLECTIVE, GAAS, SPDT SWITCH,100 MHZ TO 4 GHZ

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Search across all available documentation for this part.

DocumentsPackage Drawing - 8-Lead MSOP w/ EPHMC349AMS8G: High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz Data Sheet (Rev.F)
RF and Wireless

HMC349AMS8G

Active
Analog Devices

HIGH ISOLATION, NONREFLECTIVE, GAAS, SPDT SWITCH,100 MHZ TO 4 GHZ

Deep-Dive with AI

DocumentsPackage Drawing - 8-Lead MSOP w/ EPHMC349AMS8G: High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz Data Sheet (Rev.F)

Technical Specifications

Parameters and characteristics for this part

SpecificationHMC349AMS8G
CircuitSPDT
IIP3 [Min]53 dBm
Impedance50 Ohms
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
RF TypeGeneral Purpose

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

HMC349AMS8G Series

The HMC349AMS8G is a gallium arsenide (GaAs), pseudo-morphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz.The HMC349AMS8G is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB of 34 dBm.The HMC349AMS8G operates with a single positive supply voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible control interface.The HMC349AMS8G comes in an 8-lead mini small outline package with an exposed pad.ApplicationsCellular/4G infrastructureWireless infrastructureMobile radiosTest equipment