HMC349AMS8G Series
High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz
Manufacturer: Analog Devices
Catalog
High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz
Key Features
• Nonreflective, 50 Ω design
• High isolation: 57 dB to 2 GHz
• Low insertion loss: 0.9 dB to 2 GHz
• High input linearity1 dB power compression (P1dB): 34 dBm typicalThird-order intercept (IP3): 52 dBm typical
• 1 dB power compression (P1dB): 34 dBm typical
• Third-order intercept (IP3): 52 dBm typical
• High power handling33.5 dBm through path26.5 dBm terminated path
• 33.5 dBm through path
• 26.5 dBm terminated path
• Single positive supply: 3 V to 5 V
• CMOS-/TTL-compatible control
• All off state control
• 8-lead mini small outline package with exposed pad (MINI_SO_EP)
Description
AI
The HMC349AMS8G is a gallium arsenide (GaAs), pseudo-morphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz.The HMC349AMS8G is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB of 34 dBm.The HMC349AMS8G operates with a single positive supply voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible control interface.The HMC349AMS8G comes in an 8-lead mini small outline package with an exposed pad.ApplicationsCellular/4G infrastructureWireless infrastructureMobile radiosTest equipment
