Discrete Semiconductor Products
STGWA75M65DF2
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 75 A LOW LOSS
Discrete Semiconductor Products
STGWA75M65DF2
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 75 A LOW LOSS
Technical Specifications
Parameters and characteristics for this part
| Specification | STGWA75M65DF2 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 120 A |
| Current - Collector Pulsed (Icm) | 225 A |
| Gate Charge | 225 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 468 W |
| Reverse Recovery Time (trr) | 165 ns |
| Supplier Device Package | TO-247 Long Leads |
| Switching Energy | 2.54 mJ, 690 µJ |
| Td (on/off) @ 25°C [custom] | 47 ns |
| Td (on/off) @ 25°C [custom] | 125 ns |
| Test Condition | 75 A, 3.3 Ohm, 15 V, 400 V |
| Vce(on) (Max) @ Vge, Ic | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 6.66 | |
Description
General part information
STGWA75M65DF2 Series
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.