FFSB20120A-F085
ActiveSILICON CARBIDE SCHOTTKY DIODE, ELITESIC SERIES, SINGLE, 1.2 KV, 20 A, 120 NC, TO-263 (D2PAK)
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FFSB20120A-F085
ActiveSILICON CARBIDE SCHOTTKY DIODE, ELITESIC SERIES, SINGLE, 1.2 KV, 20 A, 120 NC, TO-263 (D2PAK)
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Technical Specifications
Parameters and characteristics for this part
| Specification | FFSB20120A-F085 |
|---|---|
| Capacitance @ Vr, F | 1220 pF |
| Current - Average Rectified (Io) | 32 A |
| Current - Reverse Leakage @ Vr | 200 µA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 12.33 | |
| 10 | $ 10.86 | |||
| 100 | $ 9.39 | |||
| Digi-Reel® | 1 | $ 12.33 | ||
| 10 | $ 10.86 | |||
| 100 | $ 9.39 | |||
| Tape & Reel (TR) | 800 | $ 7.26 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 16.05 | |
| 10 | $ 13.82 | |||
| 25 | $ 13.73 | |||
| 50 | $ 13.72 | |||
| 100 | $ 12.32 | |||
| 250 | $ 12.08 | |||
| 500 | $ 12.05 | |||
| 1600 | $ 11.88 | |||
| ON Semiconductor | N/A | 1 | $ 6.68 | |
Description
General part information
FFSB20120A-F085 Series
Silicon Carbide (SiC) Schottky Diodes use a completely newtechnology that provides superior switching performance and higherreliability compared to Silicon. No reverse recovery current,temperature independent switching characteristics, and excellentthermal performance sets Silicon Carbide as the next generation ofpower semiconductor. System benefits include highest efficiency,faster operating frequency, increased power density, reduced EMI, andreduced system size and cost.
Documents
Technical documentation and resources
