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TO-263
Discrete Semiconductor Products

FFSB20120A

Active
ON Semiconductor

SILICON CARBIDE (SIC) SCHOTTKY DIODE – ELITESIC, 20 A, 1200 V, D1, D2PAK-2L SILICON CARBIDE (SIC) SC… MORE

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TO-263
Discrete Semiconductor Products

FFSB20120A

Active
ON Semiconductor

SILICON CARBIDE (SIC) SCHOTTKY DIODE – ELITESIC, 20 A, 1200 V, D1, D2PAK-2L SILICON CARBIDE (SIC) SC… MORE

Deep-Dive with AI

DocumentsDatasheetDatasheet+1

Technical Specifications

Parameters and characteristics for this part

SpecificationFFSB20120A
Capacitance @ Vr, F1220 pF
Current - Average Rectified (Io)32 A
Current - Reverse Leakage @ Vr200 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Speed200 mA, 500 ns
Supplier Device PackageTO-263 (D2PAK)
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 8.89
10$ 6.08
100$ 4.48
Tape & Reel (TR) 800$ 3.91
ON SemiconductorN/A 1$ 3.59

Description

General part information

FFSB20120A-F085 Series

Silicon Carbide (SiC) Schottky Diodes use a completely newtechnology that provides superior switching performance and higherreliability compared to Silicon. No reverse recovery current,temperature independent switching characteristics, and excellentthermal performance sets Silicon Carbide as the next generation ofpower semiconductor. System benefits include highest efficiency,faster operating frequency, increased power density, reduced EMI, andreduced system size and cost.