FFSB20120A-F085 Series

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, D2PAK-2L

Catalog

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, D2PAK-2L

Part	Supplier Device Package	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Package / Case	Capacitance @ Vr, F	Grade	Qualification	Reverse Recovery Time (trr)	Speed
ON Semiconductor FFSB20120A	TO-263 (D2PAK)	Surface Mount	1.2 kV	SiC (Silicon Carbide) Schottky	200 mA 500 ns	175 ░C	-55 C	200 µA	32 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1220 pF
ON Semiconductor FFSB20120A-F085	TO-263 (D2PAK)	Surface Mount	1.2 kV	SiC (Silicon Carbide) Schottky		175 ░C	-55 C	200 µA	32 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1220 pF	Automotive	AEC-Q101	0 ns	No Recovery Time

Catalog

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, D2PAK-2L

Key Features

• Max Junction Temperature 175°C

• Avalanche Rated 200 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

• No Reverse Recovery/No Forward Recovery

• AEC−Q101 qualified and PPAP Capable

Description

Silicon Carbide (SiC) Schottky Diodes use a completely newtechnology that provides superior switching performance and higherreliability compared to Silicon. No reverse recovery current,temperature independent switching characteristics, and excellentthermal performance sets Silicon Carbide as the next generation ofpower semiconductor. System benefits include highest efficiency,faster operating frequency, increased power density, reduced EMI, andreduced system size and cost.