Specification	FGA25S125P-SN00337

Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	75 A
Gate Charge	204 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	250 W
Supplier Device Package	TO-3PN
Switching Energy	580 µJ, 1.09 mJ
Td (on/off) @ 25°C [custom]	24 ns
Td (on/off) @ 25°C [custom]	502 ns
Test Condition	15 V, 10 Ohm, 25 A, 600 V
Vce(on) (Max) @ Vge, Ic	2.35 V

FGA25S125P Series

IGBT, 1250V, 25A, Shorted-anode

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power - Max [Max]	Current - Collector (Ic) (Max)	Switching Energy	Test Condition	Gate Charge	Supplier Device Package	Current - Collector Pulsed (Icm)	Mounting Type	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	IGBT Type	Vce(on) (Max) @ Vge, Ic
ON Semiconductor FGA25S125P-SN00337	-55 °C	175 ░C	SC-65-3 TO-3P-3	250 W	50 A	1.09 mJ 580 µJ	10 Ohm 15 V 25 A 600 V	204 nC	TO-3PN	75 A	Through Hole	24 ns	502 ns	Trench Field Stop	2.35 V
ON Semiconductor FGA25S125P			SC-65-3 TO-3P-3	250 W	50 A			204 nC	TO-3PN	75 A	Through Hole			Trench Field Stop	2.35 V
ON Semiconductor FGA25S125P-SN00337	-55 °C	175 ░C	SC-65-3 TO-3P-3	250 W	50 A	1.09 mJ 580 µJ	10 Ohm 15 V 25 A 600 V	204 nC	TO-3PN	75 A	Through Hole	24 ns	502 ns	Trench Field Stop	2.35 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 3.01
		100	$ 3.01

Description

General part information

FGA25S125P Series

Using advanced field stop trench and shorted-anode technology, ON Semiconductor’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven.