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Technical Specifications
Parameters and characteristics for this part
| Specification | FGA25S125P |
|---|---|
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 75 A |
| Gate Charge | 204 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Package / Case | SC-65-3, TO-3P-3 |
| Power - Max [Max] | 250 W |
| Supplier Device Package | TO-3PN |
| Vce(on) (Max) @ Vge, Ic | 2.35 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
FGA25S125P Series
Using advanced field stop trench and shorted-anode technology, ON Semiconductor’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven.
Documents
Technical documentation and resources