FGA25S125P Series

IGBT, 1250V, 25A, Shorted-anode

Catalog

IGBT, 1250V, 25A, Shorted-anode

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power - Max [Max]	Current - Collector (Ic) (Max)	Switching Energy	Test Condition	Gate Charge	Supplier Device Package	Current - Collector Pulsed (Icm)	Mounting Type	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	IGBT Type	Vce(on) (Max) @ Vge, Ic
ON Semiconductor FGA25S125P-SN00337	-55 °C	175 ░C	SC-65-3 TO-3P-3	250 W	50 A	1.09 mJ 580 µJ	10 Ohm 15 V 25 A 600 V	204 nC	TO-3PN	75 A	Through Hole	24 ns	502 ns	Trench Field Stop	2.35 V
ON Semiconductor FGA25S125P			SC-65-3 TO-3P-3	250 W	50 A			204 nC	TO-3PN	75 A	Through Hole			Trench Field Stop	2.35 V
ON Semiconductor FGA25S125P-SN00337	-55 °C	175 ░C	SC-65-3 TO-3P-3	250 W	50 A	1.09 mJ 580 µJ	10 Ohm 15 V 25 A 600 V	204 nC	TO-3PN	75 A	Through Hole	24 ns	502 ns	Trench Field Stop	2.35 V

Catalog

IGBT, 1250V, 25A, Shorted-anode

Key Features

• High speed switching

• Low saturation voltage: VCE(sat)=1.8V @ IC= 25A

• High input impedance

• RoHS compliant

Description

Using advanced field stop trench and shorted-anode technology, ON Semiconductor’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven.