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INFINEON IHW20N65R5XKSA1
Discrete Semiconductor Products

AFGY120T65SPD

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ON Semiconductor

IGBT - 650 V 120 A FS3 FOR EV TRACTION INVERTER APPLICATION

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INFINEON IHW20N65R5XKSA1
Discrete Semiconductor Products

AFGY120T65SPD

Active
ON Semiconductor

IGBT - 650 V 120 A FS3 FOR EV TRACTION INVERTER APPLICATION

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationAFGY120T65SPD
Current - Collector (Ic) (Max) [Max]160 A
Current - Collector Pulsed (Icm)360 A
Gate Charge125 nC
GradeAutomotive
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]714 W
QualificationAEC-Q101
Reverse Recovery Time (trr)107 ns
Supplier Device PackageTO-247-3
Switching Energy6.6 mJ, 3.8 mJ
Td (on/off) @ 25°C40 ns, 80 ns
Test Condition400 V, 5 Ohm, 15 V, 120 A
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 8.62
30$ 7.23
NewarkEach 1$ 13.88
10$ 13.19
25$ 12.72
50$ 12.29
ON SemiconductorN/A 1$ 6.65

Description

General part information

AFGY120T65SPD-B4 Series

AFGY120T65SPD-B4 is a 650 V 120 A IGBT based on trench field stop 3 technology. This product is binned based on Vcesat and Vth i.e. the top side marking on each individual unit defines the range of Vcesat and Vth the particular device has. This allows customers to assemble units in parallel that have very close parameter distribution. This enables better current sharing in application.

Documents

Technical documentation and resources