AFGY120T65SPD-B4

Obsolete

ON Semiconductor

IGBT - 650V, 120A FIELD STOP TRENCH IGBT WITH VCESAT AND VTH BINNING

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Discrete Semiconductor Products

AFGY120T65SPD-B4

Obsolete

ON Semiconductor

IGBT - 650V, 120A FIELD STOP TRENCH IGBT WITH VCESAT AND VTH BINNING

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DocumentsDatasheet Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	AFGY120T65SPD-B4

Current - Collector (Ic) (Max) [Max]	240 A
Current - Collector Pulsed (Icm)	378 A
Gate Charge	243 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	882 W
Reverse Recovery Time (trr)	123 ns
Supplier Device Package	TO-247-3
Switching Energy	6.8 mJ, 3.5 mJ
Td (on/off) @ 25°C	102 ns, 53 ns
Test Condition	400 V, 5 Ohm, 15 V, 120 A
Vce(on) (Max) @ Vge, Ic	1.85 V
Voltage - Collector Emitter Breakdown (Max)	650 V

AFGY120T65SPD-B4 Series

IGBT - 650V, 120A Field Stop Trench IGBT with VCESAT and VTH Binning

Part	Qualification	Current - Collector Pulsed (Icm)	Grade	Voltage - Collector Emitter Breakdown (Max)	Gate Charge	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Reverse Recovery Time (trr)	Operating Temperature [Min]	Operating Temperature [Max]	IGBT Type	Test Condition	Power - Max [Max]	Switching Energy	Td (on/off) @ 25°C	Mounting Type	Package / Case	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic
ON Semiconductor AFGY120T65SPD	AEC-Q101	360 A	Automotive	650 V	125 nC	160 A	TO-247-3	107 ns	-55 °C	175 ░C	Trench Field Stop	5 Ohm 15 V 120 A 400 V	714 W	3.8 mJ 6.6 mJ	40 ns 80 ns	Through Hole	TO-247-3
ON Semiconductor AFGY120T65SPD-B4		378 A		650 V	243 nC	240 A	TO-247-3	123 ns	-55 °C	175 ░C	Trench Field Stop	5 Ohm 15 V 120 A 400 V	882 W	3.5 mJ 6.8 mJ		Through Hole	TO-247-3	53 ns 102 ns	1.85 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

AFGY120T65SPD-B4 Series

AFGY120T65SPD-B4 is a 650 V 120 A IGBT based on trench field stop 3 technology. This product is binned based on Vcesat and Vth i.e. the top side marking on each individual unit defines the range of Vcesat and Vth the particular device has. This allows customers to assemble units in parallel that have very close parameter distribution. This enables better current sharing in application.

Documents

Technical documentation and resources