Discrete Semiconductor Products

APT43M60L

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MOSFET N-CH 600V 45A TO264

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Discrete Semiconductor Products

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MOSFET N-CH 600V 45A TO264

Technical Specifications

Parameters and characteristics for this part

Specification	APT43M60L

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	215 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	8590 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max) [Max]	780 W
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	TO-264 [L]
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Package / Case	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]
Microchip Technology APT43M60B2	600 V	T-MAX™ [B2]	10 V	30 V	5 V	215 nC	150 mOhm	45 A	780 W	-55 °C	150 °C	N-Channel	TO-247-3 Variant	MOSFET (Metal Oxide)	Through Hole	8590 pF
Microchip Technology APT43M60L	600 V	TO-264 [L]	10 V	30 V	5 V	215 nC	150 mOhm	45 A	780 W	-55 °C	150 °C	N-Channel	TO-264-3 TO-264AA	MOSFET (Metal Oxide)	Through Hole	8590 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 12.56

General part information

N-Channel 600 V 45A (Tc) 780W (Tc) Through Hole TO-264 [L]

Technical documentation and resources