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T-MAX Pkg
Discrete Semiconductor Products

APT43M60B2

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Microchip Technology

MOSFET N-CH 600V 45A T-MAX

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T-MAX Pkg
Discrete Semiconductor Products

APT43M60B2

Active
Microchip Technology

MOSFET N-CH 600V 45A T-MAX

Technical Specifications

Parameters and characteristics for this part

SpecificationAPT43M60B2
Current - Continuous Drain (Id) @ 25°C45 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]215 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]8590 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3 Variant
Power Dissipation (Max) [Max]780 W
Rds On (Max) @ Id, Vgs150 mOhm
Supplier Device PackageT-MAX™ [B2]
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 50$ 12.74

Description

General part information

APT43M60 Series

N-Channel 600 V 45A (Tc) 780W (Tc) Through Hole T-MAX™ [B2]

Documents

Technical documentation and resources