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SOT-23-3
Discrete Semiconductor Products

KVX38S2-23-0

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Microchip Technology

VARIABLE CAPACITANCE DIODE, VERY HIGH FREQUENCY TO L BAND, 29PF C(T), 27V, SILICON, HYPERABRUPT

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SOT-23-3
Discrete Semiconductor Products

KVX38S2-23-0

Active
Microchip Technology

VARIABLE CAPACITANCE DIODE, VERY HIGH FREQUENCY TO L BAND, 29PF C(T), 27V, SILICON, HYPERABRUPT

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationKVX38S2-23-0
Capacitance @ Vr, F32 pF
Diode TypeSingle
Mounting TypeSurface Mount
Operating Temperature [Max]125 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Q @ Vr, F200
Supplier Device PackageSOT-23-3
Voltage - Peak Reverse (Max) [Max]27 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 5.36
Microchip DirectN/A 1$ 5.29
50$ 5.06
100$ 4.77
250$ 4.55
500$ 4.37
1000$ 4.29
NewarkEach (Supplied on Full Reel) 500$ 4.77

Description

General part information

KVX2000-Hyperabrupt-Varactor Series

This family of high ratio hyperabrupt varactor diodes offers the designer outstanding wide frequency performance with the highest Q values available in the industry. The economical SOT23 package allows these devices to be used in a wide range of VHF-UHF and wireless microwave designs.

Documents

Technical documentation and resources