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SOT-23-3
Discrete Semiconductor Products

KVX3901A-23-4

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Microchip Technology

VARIABLE CAPACITANCE DIODE, VERY HIGH FREQUENCY TO L BAND, 29PF C(T), 27V, SILICON, HYPERABRUPT

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SOT-23-3
Discrete Semiconductor Products

KVX3901A-23-4

Active
Microchip Technology

VARIABLE CAPACITANCE DIODE, VERY HIGH FREQUENCY TO L BAND, 29PF C(T), 27V, SILICON, HYPERABRUPT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationKVX3901A-23-4
Capacitance @ Vr, F32 pF
Diode Type1 Pair Common Cathode
Mounting TypeSurface Mount
Operating Temperature [Max]125 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Q @ Vr, F500
Supplier Device PackageSOT-23-3
Voltage - Peak Reverse (Max) [Max]27 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 500$ 6.34
Microchip DirectN/A 1$ 6.24
50$ 5.99
100$ 5.63
250$ 5.39
500$ 5.18
1000$ 5.07
NewarkEach (Supplied on Full Reel) 500$ 5.63

Description

General part information

KVX2000-Hyperabrupt-Varactor Series

This family of high ratio hyperabrupt varactor diodes offers the designer outstanding wide frequency performance with the highest Q values available in the industry. The economical SOT23 package allows these devices to be used in a wide range of VHF-UHF and wireless microwave designs.

Documents

Technical documentation and resources