Discrete Semiconductor Products

GP3D020A170B

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DIODE SIL CARB 1.7KV 67A TO247-2

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Discrete Semiconductor Products

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DIODE SIL CARB 1.7KV 67A TO247-2

Technical Specifications

Parameters and characteristics for this part

Specification	GP3D020A170B

Capacitance @ Vr, F	1403 pF
Current - Average Rectified (Io)	67 A
Current - Reverse Leakage @ Vr	80 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-247-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1700 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.65 V

Part	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io) (per Diode)	Supplier Device Package	Technology	Mounting Type	Speed	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Current - Average Rectified (Io)	Capacitance @ Vr, F
SemiQ GP3D020A120U	20 ÁA 20 µA	175 ░C	-55 °C	1.65 V	10 A	TO-247-3	SiC (Silicon Carbide) Schottky	Through Hole	500 mA	TO-247-3	1.2 kV	1 Pair Common Cathode
SemiQ GP3D020A170B	80 µA	175 ░C	-55 °C	1.65 V		TO-247-2	SiC (Silicon Carbide) Schottky	Through Hole	500 mA	TO-247-2	1700 V		67 A	1403 pF
SemiQ GP3D020A120B	40 µA	175 ░C	-55 °C	1.65 V		TO-247-2	SiC (Silicon Carbide) Schottky	Through Hole	500 mA	TO-247-2	1.2 kV			1179 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1700 V 67A Through Hole TO-247-2

Technical documentation and resources