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6-VDFN Exposed Pad
RF and Wireless

HMC8412LP2FETR

Active
Analog Devices

LOW NOISE AMPLIFIER, 0.4 GHZ TO 11 GHZ

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6-VDFN Exposed Pad
RF and Wireless

HMC8412LP2FETR

Active
Analog Devices

LOW NOISE AMPLIFIER, 0.4 GHZ TO 11 GHZ

Technical Specifications

Parameters and characteristics for this part

SpecificationHMC8412LP2FETR
Current - Supply60 mA
Frequency [Max]11 GHz
Frequency [Min]400 MHz
Gain14 dBi
Mounting TypeSurface Mount
Noise Figure1.4 dB
P1dB18 dBm
Package / Case6-VDFN Exposed Pad, CSP
RF TypeRadar
Supplier Device Package6-LFCSP (2x2)
Test Frequency [Max]9 GHz
Test Frequency [Min]400 MHz
Voltage - Supply [Max]6 V
Voltage - Supply [Min]2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 76.33
10$ 67.05
25$ 64.15
Digi-Reel® 1$ 76.33
10$ 67.05
25$ 64.15
Tape & Reel (TR) 500$ 54.97

Description

General part information

HMC8412 Series

The HMC8412 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.4 GHz to 11 GHz.The HMC8412 provides a typical gain of 15.5 dB, a 1.4 dB typical noise figure, and a typical output third-order intercept (OIP3) of ≤33 dBm, requiring only 60 mA from a 5 V drain supply voltage. The saturated output power (PSAT) of ≤20.5 dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many Analog Devices, Inc., balanced, inphase and quadrature (I/Q) or image rejection mixers.The HMC8412 also features inputs and outputs that are internally matched to 50 Ω, making the device ideal for surface-mount technology (SMT)-based, high capacity microwave radio applications.The HMC8412 is housed in an RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP.ApplicationsTest instrumentationTelecommunicationsMilitary radar and communicationElectronic warfareAerospace