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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC8412CHIPS-SX |
|---|---|
| Current - Supply | 60 mA |
| Frequency [Max] | 10 GHz |
| Frequency [Min] | 400 MHz |
| Gain | 14.5 dBi |
| Mounting Type | Surface Mount |
| Noise Figure | 1.7 dB |
| P1dB | 19 dBm |
| Package / Case | Die |
| RF Type | Radar |
| Supplier Device Package | Die |
| Test Frequency [Max] | 8 GHz |
| Test Frequency [Min] | 400 MHz |
| Voltage - Supply [Max] | 6 V |
| Voltage - Supply [Min] | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Case | 2 | $ 92.51 | |
| 4 | $ 86.55 | |||
| 6 | $ 83.54 | |||
| 10 | $ 80.18 | |||
| 14 | $ 78.21 | |||
| 20 | $ 76.31 | |||
| 50 | $ 74.16 | |||
Description
General part information
HMC8412 Series
The HMC8412 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.4 GHz to 11 GHz.The HMC8412 provides a typical gain of 15.5 dB, a 1.4 dB typical noise figure, and a typical output third-order intercept (OIP3) of ≤33 dBm, requiring only 60 mA from a 5 V drain supply voltage. The saturated output power (PSAT) of ≤20.5 dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many Analog Devices, Inc., balanced, inphase and quadrature (I/Q) or image rejection mixers.The HMC8412 also features inputs and outputs that are internally matched to 50 Ω, making the device ideal for surface-mount technology (SMT)-based, high capacity microwave radio applications.The HMC8412 is housed in an RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP.ApplicationsTest instrumentationTelecommunicationsMilitary radar and communicationElectronic warfareAerospace
Documents
Technical documentation and resources
